n-channel enhancement mode mosfet semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limit semelab limit semelab limit semelab limited eded ed coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8876 issue 1 page 1 of 3 VN10K low r ds(on) , v gs(th) , c iss and fast switching speeds hermetic to-18 metal package. ideally suited for power supply circuits, switching and driver (relay, solenoid, lamp etc..) applications screening options available absolute maximum ratings (t a = 25c unless otherwise stated) v ds drain ? source voltage 60v v gs gate ? source voltage +15v, -0.3v i d continuous drain current t a = 25c 0.17a t a = 100c 0.11a i dm pulsed drain current (1) 1.0a p d total power dissipation at t a = 25c 312.5mw derate above 25c 2.5mw/c t j operating temperature range -55 to +150c t stg storage temperature range -55 to +150c thermal properties symbols parameters min. typ. max. units r ja thermal resistance, junction to ambient 400 c/w notes notes notes notes (1) repetitive rating: pulse width limited by maximum j unction temperature
n-channel enhancement mode mosfet VN10K semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8876 issue 1 page 2 of 3 electrical characteristics (t a = 25c unless otherwise stated) symbols parameters test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs = 0 i d = 100a 60 v v gs(th) gate threshold voltage v ds = v gs i d = 1.0ma 0.8 2.5 v i gss gate-source leakage current v gs = 15v v ds = 0v 100 na v ds = 48v v gs = 0 10 i dss zero gate voltage drain current t j = 125c 500 a i d(on) (2) on-state drain current v ds = 10v v gs = 10v 0.75 a v gs = 5v i d = 0.2a 7.5 v gs = 10v i d = 0.5a 5 r ds(on) (2) static drain-source on-state resistance t j = 125c 9 g fs (2) forward transconductance v ds = 10v i d = 0.5a 100 g os (2) common source output conductance v ds = 7.5v i d = 50ma 0.2 m ? dynamic characteristics c iss input capacitance v gs = 0 60 c oss output capacitance v ds = 25v 25 c rss reverse transfer capacitance f = 1.0mhz 5 pf t d(on) turn-on delay time v dd = 15v, r l = 23 , r g = 50 10 t d(off) turn-off delay time i d = 1.0a, v gen = 10v 10 ns notes notes notes notes (2) pulse width 300us, 2%
n-channel enhancement mode mosfet VN10K semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8876 issue 1 page 3 of 3 mechanical data dimensions in mm (inches) to - 18 (to - 206 aa) metal package underside view pin 1 - source pin 2 - gate pin 3 ? case & drain 1 3 2 2.54 (0.100) nom. 0.48 (0.019)0.41 (0.016) dia. 5.84 (0.230)5.31 (0.209) 4.95 (0.195)4.52 (0.178) 5 . 33 ( 0 . 210 ) 4 . 32 ( 0 . 170 ) 12 . 7 ( 0 . 500 ) m i n .
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